ZXMHC3A01N8
ZXMHC3A01N8 is MOSFET H-Bridge manufactured by Diodes Incorporated.
A Product Line of Diodes Incorporated
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30V SO8 plementary enhancement mode MOSFET H-Bridge
Summary
Device V(BR)DSS QG RDS(on) 125mΩ @ VGS= 10V N-CH 30V 3.9n C 180mΩ @ VGS= 4.5V 210mΩ @ VGS= -10V P-CH -30V 5.2n C 330mΩ @ VGS= -4.5V -1.6A 2.2A -2.1A ID TA= 25°C 2.7A
Description
This new generation plementary MOSFET H-Bridge Features low on-resistance achievable with low gate drive.
P1G
P1S/P2S
P2G
Features
- 2 x N + 2 x P channels in a SOIC package
P1D/N1D
P2D/N2D
Applications
- -
DC Motor control DC-AC Inverters
N1G
N2G
N1S/N2S
Ordering information
Device ZXMHC3A01N8TC Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2,500
Device marking
ZXMHC 3A01
Issue 1.0
- March 2009
© Diodes Incorporated
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