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ZXMN2A01F - 20V N-Channel MOSFET

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Low On-Resistance Fast Switching Speed Low Threshold Low G

Key Features

  • V(BR)DSS 20V RDS(ON) 0.12Ω @ VGS = 10V ID TA = +25°C 2.2A.

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ADVANCED INFORMATION ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS 20V RDS(ON) 0.12Ω @ VGS = 10V ID TA = +25°C 2.2A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Low On-Resistance • Fast Switching Speed • Low Threshold • Low Gate Drive • Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications • DC-DC Converters • Power Management Functions • Motor Control • Case: SOT23 • Case Material: Molded Plastic.