ZXMN3AMC Datasheet | Diodes Incorporated

A Product Line of Diodes Incorporated 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 30V RDS(on) max 120mΩ @ VGS = 10V 180mΩ @ VGS = 4.5V ID max TA = 25°C (Notes 4 & 7) 3.7A 3.0A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. - DC-DC Converters - Power management functions - Disconnect switches - Portable applications Features and Benefits - Low profile package, for thin applications - Low RθJA, thermally efficient package - 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 - Low on-resistance - Fast switching speed - “Lead-Free”, Ro HS pliant (Note 1) - Halogen and Antimony Free. "Green" Device (Note 2) - Qualified to AEC-Q101 Standards for High Reliability Mechanical Data - Case: DFN3020B-8 - Terminals: Pre-Plated Ni Pd Au leadframe - Nominal package height:...