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ZXMP3F36N8 - P-Channel MOSFET

General Description

This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance.

Key Features

  • Low on-resistance.
  • SO8 package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ZXMP3F36N8 30V SO8 P-channel enhancement mode MOSFET Summary V(BR)DSS (V) -30 RDS(on) (Ω) 0.020 @ VGS=-10V 0.028 @ VGS=-4.5V ID(A) -12.6 Description This new generation Trench MOSFET from Zetex has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance. Features • Low on-resistance • SO8 package Applications • Battery Protection • Battery disconnect • Power management functions Ordering information Device ZXMP3F36N8TA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 500 Device marking ZXMP 3F36 SD SD SD GD Top view Issue 1 - August 2008 1 www.zetex.com © Diodes Incorporated 2008 www.diodes.