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ZXTN2010Z - NPN Transistor

Key Features

  • BVCEO > 60V.
  • IC = 5A High Continuous Current.
  • RSAT = 30mΩ for a Low Equivalent On-Resistance.
  • Low Saturation Voltage VCE(SAT) < 65mV @ IC = 1A.
  • hFE Specified Up to 10A for High Current Gain Hold Up.
  • Complementary PNP Type: ZXTP2012Z.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SOT89.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green ZXTN2010Z 60V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > 60V  IC = 5A High Continuous Current  RSAT = 30mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage VCE(SAT) < 65mV @ IC = 1A  hFE Specified Up to 10A for High Current Gain Hold Up  Complementary PNP Type: ZXTP2012Z  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT89  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL- STD-202, Method 208  Weight: 0.