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ZXTN25060BZQ - 60V NPN MEDIUM POWER TRANSISTOR

General Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

Key Features

  • BVCEX > 150V.
  • BVCEO > 60V.
  • BVECO > 6V.
  • IC = 5A Continuous Collector Current.
  • VCE(sat) < 70mV @ 1A.
  • RCE(sat) = 48mΩ for a Low Equivalent On-Resistance.
  • Very Low Saturation Voltages.
  • Excellent hFE Characteristics.
  • 6V Reverse Blocking Capability.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) ZXTN2.

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Full PDF Text Transcription (Reference)

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Description This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications. Features  BVCEX > 150V  BVCEO > 60V  BVECO > 6V  IC = 5A Continuous Collector Current  VCE(sat) < 70mV @ 1A  RCE(sat) = 48mΩ for a Low Equivalent On-Resistance  Very Low Saturation Voltages  Excellent hFE Characteristics  6V Reverse Blocking Capability  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) ZXTN25060BZQ 60V NPN MEDIUM POWER TRANSISTOR IN SOT89 Mechanical Data  Case: SOT89  Case Material: Molded Plastic. “Green” Molding Compound.