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ZXTP2012Z - 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR

Key Features

  • BVCEO > -60V.
  • IC = -4.3A High Continuous Current.
  • RSAT = 32mΩ for a Low Equivalent On-Resistance.
  • Low Saturation Voltage VCE(SAT) < -65mV @ IC = -1A.
  • hFE Specified Up to -10A for High Current Gain Hold Up.
  • Complementary NPN Type: ZXTN2010Z.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.
  • PPAP Capable (Note 4) Mechanical Data.
  • Case: SOT.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green ZXTP2012Z 60V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 Features  BVCEO > -60V  IC = -4.3A High Continuous Current  RSAT = 32mΩ for a Low Equivalent On-Resistance  Low Saturation Voltage VCE(SAT) < -65mV @ IC = -1A  hFE Specified Up to -10A for High Current Gain Hold Up  Complementary NPN Type: ZXTN2010Z  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Mechanical Data  Case: SOT89  Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208  Weight: 0.