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ZXTP2013G - 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR

Key Features

  • BVCEO > -100V.
  • IC = -5A High Continuous Collector Current.
  • ICM = -10A Peak Pulse Current.
  • Low Saturation Voltage VCE(SAT) < -90mV @ -1A.
  • RSAT = 60mΩ for a Low Equivalent On-Resistance.
  • hFE Specified Up to -10A for a High Gain Hold-Up.
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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A Product Line of Diodes Incorporated Green ZXTP2013G 100V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > -100V  IC = -5A High Continuous Collector Current  ICM = -10A Peak Pulse Current  Low Saturation Voltage VCE(SAT) < -90mV @ -1A  RSAT = 60mΩ for a Low Equivalent On-Resistance  hFE Specified Up to -10A for a High Gain Hold-Up  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Application  Motor Driving  Line Switching  High Side Switches  Subscriber Line Interface Cards (SLIC) Mechanical Data  Case: SOT223  Case Material: Molded Plastic.