ZXTPS717MC Datasheet | Diodes Incorporated

Features and Benefits PNP Transistor - BVCEO > -12V - IC = -4A Continuous Collector Current - Low Saturation Voltage (-140m V max @ -1A) - RSAT = 65mΩ for a low equivalent On-Resistance - h FE characterized up to -10A for high current gain hold up Schottky Diode - BVR > 40V - IFAV = 3A Average Peak Forward Current - Low VF < 500m V (@1A) for reduced power loss - Fast switching due to Schottky barrier - Low profile 0.8mm high package for thin applications - RθJA efficient, 40% lower than SOT26 - 6mm2 footprint, 50% smaller than TSOP6 and SOT26 - Lead-Free, Ro HS pliant (Note 1) - Halogen and Antimony Free. “Green” Device (Note 2) - Qualified to AEC-Q101 Standards for High Reliability A Product Line of Diodes Incorporated 12V PNP LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY DIODE BINATION Mechanical Data - Case: DFN3020B-8 - Case Material: Molded Plastic, “Green” Molding ponent - Terminals: Pre-Plated Ni Pd Au leadframe - Nominal package height: 0.8mm - UL Flammability Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 - Weight: 0.013 grams (approximate) Applications -...