BS850 Description
BS850 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR.
BS850 Key Features
- High Input Impedance Fast Switching Speed CMOS Logic patible Input No Thermal Runaway or Secondary Breakdown Surface Mou
- Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202 Method 208 Pin Connection: See Diagram Marking: S50 Weight:
- Typ 90 1.0
- 200 60 5.0 25 Max
- 3.0 10 0.5 5.0 400 320
- ID (ON), DRAIN SOURCE ON CURRENT (A)
- VGS = 6V
- VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2. Output Characteristics
- ID (ON), DRAIN SOURCE ON-CURRENT (mA)
- VDS = 10V TA = 25 C