BYP25K6 Datasheet | Diotec Semiconductor

BYP 25A05 ... BYP 25A6 BYP 25K05 ... BYP 25K6 Silicon Press-Fit-Diodes High-temperature diodes Silizium-Einpreßdioden Hochtemperaturdioden Ø 12.75 Ø 11 ±0.1 Nominal current - Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Rändel 0.8 knurl 0.8 25 A 50…600 V 28.5 min Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung Weight approx. - Gewicht ca. Casting pound has UL classification 94V-0 Vergußmasse UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton 10 g Ø 13 ±01 Dimensions / Maße in mm Maximum ratings Type / Typ Wire to / Draht an Anode Cathode BYP 25A05 BYP 25A1 BYP 25A2 BYP 25A3 BYP 25A4 BYP 25A6 BYP 25K05 BYP 25K1 BYP 25K2 BYP 25K3 BYP 25K4 BYP 25K6 Repetitive peak reverse voltage Periodische Spitzensperrspanng. VRRM [V] 50 100 200 300 400 600 TC = 150/C f > 15 Hz TA = 25/C TA = 25/C 5 ±0.2 10.7 ±0.2 Grenzwerte Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 60 120 240 360 480 700 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50 / 60 Hz half sine-wave Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing - Grenzlastintegral, t <10 ms Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Maximum pressure - Maximaler Einpreßdruck IFAV IFRM IFSM i2t Tj TS 25 A 90 A 1) 270 / 300 A 375 A2s - 50...+215 /C - 50...+215 /C 7 k N ) Max. case temperature TC = 150/C - Max. Gehäusetemperatur TC = 150/C 28.02.2002 BYP 25A05 ... BYP 25A6 BYP 25K05 ... BYP 25K6 Characteristics Forward voltage - Durchlaßspannung Leakage current - Sperrstrom Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse Tj = 25/C Tj = 25/C IF = 25 A VR = VRRM VF IR Rth C Kennwerte < 1.1 V < 100 :A < 1 K/W New - Neu BYP 25K05 BYP 25K1 BYP 25K2 BYP 25K3 BYP 25K4 Replacements...