BYZ50K39
BYZ50K39 is Silicon Protectifiers manufactured by Diotec Semiconductor.
BYZ 50A22 ... BYZ 50A47 BYZ 50K22 ... BYZ 50K47 Silicon Protectifiers with TVS characteristics High-temperature diodes Silizium Schutzgleichrichter mit Begrenzereigenschaften Hochtemperaturdioden
Ø 12.75 Ø 11
±0.1
Nominal current
- Nennstrom Nominal breakdown voltage Nominale Abbruch-Spannung
Rändel 0.8 knurl 0.8
50 A 19 51.7 V
28.5 ±0.5
Metal press-fit case with plastic cover Metall-Einpreßgehäuse mit Plastik-Abdeckung Weight approx.
- Gewicht ca. Casting pound has UL classification 94V-0 Vergußmasse UL94V-0 klassifiziert Standard packaging: bulk Standard Lieferform: lose im Karton 10 g
Ø 13 ±01
Dimensions / Maße in mm
Maximum ratings
Type / Typ Wire to / Draht an Anode BYZ 50A22 BYZ 50A27 BYZ 50A33 BYZ 50A39 BYZ 50A47 Cathode BYZ 50K22 BYZ 50K27 BYZ 50K33 BYZ 50K39 BYZ 50K47 Breakdown voltage Abbruch-Spannung IT = 100 m A VBRmin [V] VBRmax 19.8 24.3 29.7 35.1 42.3 24.2 29.7 36.3 42.9 51.7 Reverse voltage Sperrspannung IR = 5 :A VR [V] > 17.8 > 21.8 > 26.8 > 31.6 > 38.1
5 ±0.2
±0.2
Grenzwerte
Max. clamping voltage Max. Begrenzerspanng. at / bei IPP, tp = 1m s VC [V] IPP [A] 31,9 39,1 47,7 56,4 67,8 242 192 160 134 112
Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Peak forward surge current, 50 / 60 Hz half sine-wave Stoßstrom für eine 50 / 60 Hz Sinus-Halbwelle Rating for fusing
- Grenzlastintegral, t <10 ms Forward voltage
- Durchlaßspannung Tj = 25/C
TC = 150/C TA = 25/C TA = 25/C IF = 50 A
IFAV IFSM i2t VF Tj TS
50 A 400 / 450 A 800 A2s < 1.1 V
- 50…+215/C
- 50…+215/C
Operating junction temperature
- Sperrschichttemperatur Storage temperature
- Lagerungstemperatur
BYZ 50A22 ... BYZ 50A47 BYZ 50K22 ... BYZ 50K47 Max. junction temperature in case of “Load Dump” Max. Sperrschichttemperatur bei “Load Dump” Thermal resistance junction to case Wärmewiderstand...
