PT800M Datasheet | Diotec Semiconductor

.. PT800A ... PT800M PT800A ... PT800M Silicon Rectifiers - Single Diode Silizium-Gleichrichter - Einzeldiode Version 2007-07-06 ±0.2 Nominal current Nennstrom 8A 50...1000 V TO-220AC 1.8 g Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse 1 2 3 1.5 0.9 5.08 1 2 3 Weight approx. Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Dimensions - Maße [mm] Maximum ratings and Characteristics Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 50 100 200 400 600 800 1000 Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] 50 100 200 400 600 800 1000 TC = 100°C f > 15 Hz TA = 25°C TA = 25°C Grenz- und Kennwerte Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 8 A < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 < 1.1 8A 30 A 2) 135/150 A 90 A2s -50...+150°C -50...+175°C < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 < 1.0 IFAV IFRM IFSM i2t PT800A PT800B PT800D PT800G PT800J PT800K PT800M Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Tj 1 2 Tj = 25°C Max. temperature of the case TC = 100°C - Max. Temperatur des Gehäuses TC = 100°C http://.diotec./ © Diotec Semiconductor AG .. PT800A ... PT800M Characteristics Leakage current Sperrstrom Thermal resistance junction to case Wärmewiderstand...