Diotec Semiconductor BC328-40
Si-Epitaxial PlanarTransistors
| Part No. | BC328-40 |
|---|---|
| Datasheet | BC328-40 Download |
| Manufacturer |  Diotec Semiconductor |
| Description | Si-Epitaxial PlanarTransistors |
| Buy | Stock & Price |
MAXIMUM RATINGS
Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case1) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 327 45 50 5 BC 328 25 30 800 1 100 200 625 150 Unit V mA A mA mW ˚C – 65 … + 150 200 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 327 BC 328ELECTRICAL CHARACTERISTICS
at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 327 BC 328 Collector-base breakdown voltage IC = 100 µA BC 327 BC 328 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 25 V VCB = 45 V VCB = 25 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 mA; VCE...
