Diotec Semiconductor BFN23
Surface mount Si-Epitaxial PlanarTransistors
BFN23 Specifications
- Max Collector Current : 50mA
- Terminals : 3
- Collector Emitter Voltage : 250V
- Collector Emitter Saturation Voltage : 500mV
- Max Power Dissipation : 150mW
- Max Operating Temp : 150°C
Source:
Octopart
BFN 23 PNP High Voltage Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert PNP 250 mW SOT-23 (TO-236) 0.01 g Dimensions / Maße in mm 1=B 2=E 3=C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Collector-Emitter-voltage Emitter-Base-voltage B open E open RBE = 2.7 kS C open - VCE0 - VCB0 - VCER - VEB0 Ptot - IC - ICM Tj TS Grenzwerte (TA = 25/C) BFN 23 250 V 250 V 250 V 5V 250 mW 1) 50 mA 100 mA 150/C - 65…+ 150/C Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) Peak Collector current – Kollektor-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25/C) Min.