PPS560 Datasheet | Diotec Semiconductor

Features AEC-Q101 (add suffix “-Q”) patible to industry standard packages AEC-Q101 (ergänze Suffix „-Q“) Kompatibel zu industrieüblichen Gehäusen Maximum ratings and Characteristics Type Typ Repet. / Surge peak rever. voltage Periodische- / Spitzen-Sperrspg. VRRM [V] / VRSM [V] 60 100 Forward Voltage Durchlass-Spannung VF [V] Tj = 125°C 1) IF = 2 A PPS560 PPS5100 tbd tbd IF = 5 A tbd tbd TC = 100°C f > 15 Hz TA = 25°C TA = 25°C Grenz- und Kennwerte Forward Voltage Durchlass-Spannung VF [V] Tj = 25°C 1) IF = 2 A < tbd < tbd IFAV IFRM IFSM i2t Tj TS IF = 5 A < 0.69 < 0.88 20A 2) 30 A 2) 150/165 A 2) 112 A2s 2) -50...+150°C -50...+150°C Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last Repetitive peak forward current Periodischer Spitzenstrom Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur Both anode pins connected - Beide Anodenanschlüsse kontaktiert http://.diotec./ © Diotec Semiconductor AG 1 http://.. PPS560, PPS5100 Characteristics Leakage current Sperrstrom Leakage current Sperrstrom PPS560 Tj = 25°C Tj = 125°C PPS5100 Tj = 25°C Tj = 125°C VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM VR = VRRM IR IR IR IR IR IR Rth C VR = 4 V Cj Kennwerte typ. tbd µA < 150 µA typ. tbd m A typ. tbd µA < 15 µA typ. tbd m A < 2.0 K/W 200 p F Thermal resistance junction to case Wärmewiderstand Sperrschicht - Gehäuse Typical Junction Capacitance Typische Sperrschichtkapazität 120 [%] 100 20 IFAV 0 0 TT,L 50 100 150 [°C] Rated forward current vs. temp. of the terminals Zul. Richtstrom in Abh. v. d. Temp. der Terminals 2 http://.diotec./ © Diotec Semiconductor AG...