• Part: 501N04A
  • Description: RF Power MOSFET
  • Manufacturer: Directed Energy
  • Size: 110.34 KB
Download 501N04A Datasheet PDF
501N04A page 2
Page 2
501N04A page 3
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501N04A Key Features

  • Isolated Substrate
  • high isolation voltage (>2500V)
  • excellent thermal transfer
  • Increased temperature and power
  • cycling capability IXYS advanced low Qg process easier to drive faster switching Low RDS(on) Very low insertion inductan
  • Optimized for RF and high speed
  • Easy to mount-no insulators needed
  • High power density