DnI D2P4M
Standard Gate SCR
FEATURES
1.Cathode Symbol 2. Anode BVDRM = 400V IT(RMS) = 2.0 A 3.Gate ITSM = 4 A Repetitive Peak Off-State Voltage : 400V R.M.S On-State Current ( IT(RMS)= 2.0 A ) On-State Voltage (2.2V(max) @ ITM= 4A) Pb - Free Packages are Available TO-126GENERAL DESCRIPTION
Sensitive-gate triggering thyristor is suitable for the application where requiring low gate triggerring current system Used for electric blanket ,electronic jar ,temperature control,lighting control such as a entertainment display. Automatic ignition system , Battery charger . 1 2 3ABSOLUTE MAXIMUM RATINGS
Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =77 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TC= 77 °C, pulse width TC =77°C,pulse width TC =77 °C, pulse width TC= 77 °C, pulse width 1.0 1.0 1.0 1.0 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.