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D2P4M Datasheet PDF

DnI D2P4M

Standard Gate SCR

Part No. D2P4M
Datasheet D2P4M Download
Manufacturer
DnI
Description Standard Gate SCR
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D2P4M datasheet page 1 preview

FEATURES

1.Cathode Symbol 2. Anode BVDRM = 400V IT(RMS) = 2.0 A 3.Gate ITSM = 4 A Repetitive Peak Off-State Voltage : 400V R.M.S On-State Current ( IT(RMS)= 2.0 A ) On-State Voltage (2.2V(max) @ ITM= 4A) Pb - Free Packages are Available TO-126

GENERAL DESCRIPTION

Sensitive-gate triggering thyristor is suitable for the application where requiring low gate triggerring current system Used for electric blanket ,electronic jar ,temperature control,lighting control such as a entertainment display. Automatic ignition system , Battery charger . 1 2 3

ABSOLUTE MAXIMUM RATINGS

Symbol VDRM IT(AV) IT(RMS) ITSM I2 t PGM PG(AV) IFGM VRGM TJ TSTG ( TJ = 25°C unless otherwise specified ) Condition sine wave,50 to 60Hz,gate open half sine wave : TC =77 °C 180° Conduction Angle 1/2 Cycle, 60Hz, Sine Wave Non-Repetitive t = 8.3ms TC= 77 °C, pulse width TC =77°C,pulse width TC =77 °C, pulse width TC= 77 °C, pulse width 1.0 1.0 1.0 1.0 Parameter Repetitive Peak Off-State Voltage Average On-State Current R.
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