DBT134-600
DBT134-600 is Triacs manufactured by DnI.
Features
Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 4 A ) High mutation dv/dt Sensitive Gate Triggering 4 Mode
2.T2
BVDRM = 600V IT(RMS) = 4 A
3.Gate
1.T1
ITSM = 25 A
TO-126
General Description
This device is sensitive gate triac suitable for direct coupling to TTL, HTL, CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment.
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz, Gate open TC = 104 °C, Full Sine wave One Cycle, 50Hz/60Hz, Peak, Non-Repetitive tp= 10ms TC = 104 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C 1.0us
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2t for Fusing Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Operating Junction Temperature Storage Temperature
Ratings
600 4 25/27 3.1 5 0.5 2 5
- 40 ~ 125
- 40 ~ 150
Units
V A A A 2s W W A V °C °C
April, 2005. Rev.0 copyright @ D&I Semiconductor Co., Ltd., All rights reserved.
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DBT134
- 600
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 5 A, Inst. Measurement
Ratings Min. Typ. Max.
0.5 1.4 1.7 5 5
Unit
IDRM VTM I+GT1 I -GT1 m A...
