DnI DFD30N06
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier.| Part No. | DFD30N06 |
|---|---|
| Datasheet | DFD30N06 Download |
| Manufacturer |  DnI |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● Low RDS(on) (0.04Ω )@VGS=10V Low Gate Charge (Typical 27nC) Low Crss (Typical 75pF) Improved dv/dt Capability 100% Avalanche Tested Maximum Junction Temperature Range 2.Drain BVDSS = 60V 1.Gate 3.Source RDS(ON) = 0.04 ohm ID = 30A
GENERAL DESCRIPTION
Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics. TO-252 (D-Pak) 2 1 3ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 3) (Note 1) Parameter Value 60 24.5 17.3 98 ±20 430 7.0 53 0.35 - 55 ~ 175 300 Units V A A A V mJ V/ns W W/°C °C °C T...
