DFF4N60
Description
This N-channel enhancement mode field-effect power transistor using D& I semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Key Features
- High ruggedness RDS(on) (Max 2.5 )@VGS=10V
- Gate { { { N-Channel MOSFET
- Drain BVDSS = 600V RDS(ON) = 2.5 ohm ID = 4A
- Source Gate Charge (Typical 25nC) Improved dv/dt Capability 100% Avalanche Tested
