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DFF50N06
N-Channel MOSFET
Features
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RDS(on) (Max 0.023Ω )@VGS=10V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.Drain
BVDSS = 60V
1.Gate 3.Source
RDS(ON) = 0.023 ohm ID = 28A
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for battery operated systems like a DC-DC converter motor control , ups ,audio amplifier. Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.