DFP730 Datasheet | DnI

.. N-Channel MOSFET Features - - - - - 2.Drain RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32n C) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 1.Gate BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast . TO-220 1...