DnI DFP730
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .| Part No. | DFP730 |
|---|---|
| Datasheet | DFP730 Download |
| Manufacturer |  DnI |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
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● 2.Drain RDS(on) (Max 1 Ω )@VGS=10V Gate Charge (Typical 32nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 1.Gate BVDSS = 400V RDS(ON) = 1 ohm ID = 6.5A 3.Source
GENERAL DESCRIPTION
Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. TO-220 1 2 3ABSOLUTE MAXIMUM RATINGS
Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 400 6.5 2.9 26 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 470 9.8 5.3 98 0.78 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Oct, 2004.
