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DFP840 - N-Channel MOSFET

Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Features

  • RDS(on) (Max 0.85 )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 500V 1.Gate RDS(ON) = 0.85 ohm ID = 8A 3.Source General.

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Datasheet Details

Part number DFP840
Manufacturer DnI
File Size 642.82 KB
Description N-Channel MOSFET
Datasheet download datasheet DFP840 Datasheet
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www.DataSheet4U.com DFP840 N-Channel MOSFET Features RDS(on) (Max 0.85 )@VGS=10V Gate Charge (Typical 48nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.Drain BVDSS = 500V 1.Gate RDS(ON) = 0.85 ohm ID = 8A 3.Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220 pkg is well suited for half bridge and full bridge resonant topolgy like a electronic ballast .
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