DFU2N60
DFU2N60 is N-Channel MOSFET manufactured by DnI.
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N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15n C) Improved dv/dt Capability 100% Avalanche Tested 1. Gate {
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2. Drain
BVDSS = 600V RDS(ON) = 5.5ohm ID = 2.1A
3. Source
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The I-PAK pkg is well suited for charger SMPS and small power inverter application.
I-PAK
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