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DFU2N60 - N-Channel MOSFET

Description

This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

Features

  • High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5ohm ID = 2.1A 3. Source General.

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Datasheet Details

Part number DFU2N60
Manufacturer DnI
File Size 657.18 KB
Description N-Channel MOSFET
Datasheet download datasheet DFU2N60 Datasheet
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www.DataSheet4U.com DFU2N60 N-Channel MOSFET Features High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv/dt Capability 100% Avalanche Tested 1. Gate { { { 2. Drain BVDSS = 600V RDS(ON) = 5.5ohm ID = 2.1A 3. Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The I-PAK pkg is well suited for charger SMPS and small power inverter application.
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