DTF12A80
DTF12A80 is Triacs manufactured by DnI.
Features
Repetitive Peak Off-State Voltage : 800V R.M.S On-State Current ( IT(RMS)= 12 A ) High mutation dv/dt Isolation Voltage ( VISO = 2500V AC )
2.T2
BVDRM = 800V IT(RMS) = 12 A
3.Gate
1.T1
ITSM = 130 A TO-220F
General Description
This device is fully isolated package suitable for AC switching application, phase control application such as fan speed and temperature modulation control, industrial and domestic lighting control and static switching relay.
Absolute Maximum Ratings
Symbol
VDRM IT(RMS) ITSM I2 t PGM PG(AV) IGM VGM VISO TJ TSTG
( TJ = 25°C unless otherwise specified ) Condition
Sine wave, 50 to 60 Hz,Gate Open TC = 79 °C One Cycle, 50Hz/60Hz, Peak, Non-Repetitive t =10ms TC =79 °C, Pulse width Over any 20ms period tp = 20us, TJ=125°C tp = 20us, TJ=125°C A.C. 1 minute 1.0us
Parameter
Repetitive Peak Off-State Voltage R.M.S On-State Current Surge On-State Current I2 t Peak Gate Power Dissipation Average Gate Power Dissipation Peak Gate Current Peak Gate Voltage Isolation Breakdown Voltage(R.M.S.) Operating Junction Temperature Storage Temperature Mass
Ratings
800 12 119/130 71 5.0 0.5 2.0 10 2500
- 40 ~ 125
- 40 ~ 150 2.0
Units
V A A A2 s W W A V V °C °C g
MAY, 2005. Rev. 0 copyright@ D&I Semiconductor Co., Ltd., All rights reserved.
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DTF12A60
Electrical Characteristics
Symbol Items
Repetitive Peak Off-State Current Peak On-State Voltage
Conditions
VD = VDRM, Single Phase, Half Wave TJ = 125 °C IT = 20 A, Inst. Measurement
Ratings Min. Typ. Max.
2.0 1.4 25
Unit
IDRM VTM I+GT1 I -GT1 I -GT3 V+GT1 V-GT1 V-GT3 VGD (dv/dt)c IH Rth(j-c) m A V
Gate Trigger Current
VD = 6 V,...
