DESCRIPTION
： It can be used in a wide variety of applications. FEATURES
： 1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. DO3400B D G S Package Marking and Ordering Information： Part NO. Marking Package DO3400B 3400 SOT-23 ABSOLUTE MAXIMUM RATINGS
：(TC=25℃ unless otherwise noted) Symbol VDS VGS ID IDM PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current-TA=25℃ Continuous Drain Current-TA=100℃ Pulse Drain Current Tested note1 Power Dissipation-TA=25℃ Operating and Storage Junction Temperature Range Ratings 30 ±12 5.8 3.8 23.2 1.36 -55 to +150 Thermal Characteristics： Symbol Parameter Max RƟJA Thermal Resistance,Junction to Ambient 92 Packing 3000pcs/Reel Units V V A A W ℃ Units ℃/W V2.0 —1— ELECTRICAL CHARACTERISTICS
：(TC=25℃ unless otherwise noted) DO3400B Symbol Off Characteristics BVDSS IDSS IGSS On Ch...
Doingter
