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3400 - N-Channel MOSFET

General Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • 1) VDS=30V,ID=5.8A,RDS(ON).

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Datasheet Details

Part number 3400
Manufacturer Doingter
File Size 2.39 MB
Description N-Channel MOSFET
Datasheet download datasheet 3400 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation. DO3400B D G S Package Marking and Ordering Information： Part NO.