DC003NG-E - N-Channel MOSFET

Doingter

General Description

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Key Features

1) VDS=30V,ID=150A,RDS(ON).

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DC003NG-E n-channel mosfet by Doingter - Datasheet Preview

Datasheet Details

Part number	DC003NG-E
Manufacturer	Doingter
File Size	1.20 MB
Description	N-Channel MOSFET
Datasheet	DC003NG-E Datasheet

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Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=150A,RDS(ON)<3.3mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation.