DC003NG-E Datasheet | Doingter

Description ： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features ： 1) VDS=30V,ID=150A,RDS(ON)<3.3mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation. Absolute Maximum Ratings：(TC=25℃ unless otherwise noted) Symbol VDS VGS IDM PD EAS TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current-TC=25℃ Continuous Drain Current-TC=100℃ Pulsed Drain Current 1 Power Dissipation Single pulse avalanche energy 2 Operating and Storage Junction Temperature Range Ratings 30 ±20 150 98 600 108 225 -55 to +150 Thermal Characteristics： Symbol Parameter Max RƟJC Thermal Resistance,Junction to Case .doingter.cn - 1- Units V V A A A W m J ℃ Units ℃/W Package Marking and Ordering Information： Part NO. Marking C003N-E Electrical Characteristics：(TC=25℃ unless otherwise noted) Symbol Off Characteristics BVDSS IDSS IGSS On Characteristics VGS(th) Parameter Drain-Sourtce Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistanc3 Dynamic Characteristics Ciss Input Capacitance Coss...