DO3400B
DO3400B is manufactured by Doingter.
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
：
1) VDS=30V,ID=5.8A,RDS(ON)<26mΩ@VGS=10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra RDS(ON). 5) Excellent package for good heat dissipation.
Package Marking and Ordering Information：
Part NO.
Marking
Package
SOT-23...
