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ZC018PG - P-Channel MOSFET

Description

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features

  • 1) VDS=-30V,ID=-35A,RDS(ON).

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Datasheet preview – ZC018PG

Datasheet Details

Part number ZC018PG
Manufacturer Doingter
File Size 1.27 MB
Description P-Channel MOSFET
Datasheet download datasheet ZC018PG Datasheet
Additional preview pages of the ZC018PG datasheet.

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    Full PDF Text Transcription

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    Description： This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=-30V,ID=-35A,RDS(ON) <18mΩ@VGS=-10V 2) Low gate charge. 3) Green device available. 4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 5) Excellent package for good heat dissipation.
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