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XWG032N04G N-Channel Enhancement Mosfets
Feature
● 40V,100A ● RDS(ON) <3.2mΩ @VGS=10V (TYP:2.7mΩ) ● RDS(ON) <4.6mΩ @VGS=4.5V (TYP:3.8mΩ ) ● Split Gate Trench Technology ● Lead free product is acquired ● Excellent RDS (ON) and Low Gate Charge
XWG032N04G
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XWG032N04G N-Channel Enhancement Mosfets
DongWei ElectronicTechnology Co.