FMND2G08S3D-IA Datasheet | Dosilicon

description Typo correction and modify some format Draft date Aug 29, 2018 May 29, 2019 Jul 8, 2019 Nov 26, 2019 Dec 9, 2019 Jan 17, 2020 Jul 10, 2020 Remark Rev.06 (Jul 10, 2020) 2 FEATURES - x8/x16 I/O BUS － NAND Interface － ADDRESS / DATA Multiplexing - SUPPLY VOLTAGE － VCC = 1.8/2.7/3.3 Volt core supply voltage for Program, Erase and Read operations - PAGE READ / PROGRAM － x8 : (2048+64 spare) byte － x16: (1024+32 spare) word page － Synchronous Page Read Operation － Random access : 25us (Max) － Serial access : 45ns (1.8V) 25ns (2.7/3.3V) － Page program time : 200us (Typ) - PAGE COPY BACK － Fast data copy without external buffering - CACHE PROGRAM － Internal buffer to improve the program throughput - READ CACHE 2Gbit NAND Flash Memory - LEGACY/ONFI 1.0 MAND SET - FAST BLOCK ERASE － Block size : x8 : (128K + 4K) bytes x16: (64K+2K) words － Block erase time : 2ms (Typ) - MEMORY CELL ARRAY － x8 : (2K + 64) bytes x 64 pages x 2048 blocks － x16: (1K + 32) words x 64 pages x 2048 blocks - ELECTRONIC SIGNATURE － Manufacturer Code － Device Code - STATUS REGISTER - HARDWARE DATA PROTECTION - DATA RETENTION － 100K cycling Program / Erase cycles － Data retention : 10 Years(4bit/512byte ECC) － Block zero is a valid block and will be valid for at least 1K program-erase cycles with ECC Rev.06 (Jul 10, 2020) 3 Part Numbering System 2Gbit NAND Flash Memory Dosilicon Memory Product Family ND :...