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DIM1200NSM17-E000 - Single Switch IGBT Module

Key Features

  • I I I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY.

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Datasheet Details

Part number DIM1200NSM17-E000
Manufacturer Dynex Semiconductor
File Size 188.32 KB
Description Single Switch IGBT Module
Datasheet download datasheet DIM1200NSM17-E000 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DIM1200NSM17-E000 www.DataSheet4U.com DIM1200NSM17-E000 Single Switch IGBT Module Replaces June 2004 version, issue PDS5644-2.0 PDS5644-3.0 July 2004 FEATURES I I I I I I Trench Gate Field Stop Technology Low Conduction Losses Low Switching Losses 10µs Short Circuit Withstand Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS VCES (typ) VCE(sat) * (max) IC (max) IC(PK) 1700V 2.0V 1200A 2400A *Measured at auxiliary terminals. External connection C1 C2 APPLICATIONS I Aux C High Reliability Inverters G G G Wind Turbines Motor Controllers UPS Systems G Aux E E1 E2 I Traction G G External connection Propulsion Drives Auxiliaries Fig.