DIM200PHM33-A000 Datasheet | Dynex Semiconductor

FEATURES KEY PARAMETERS VCES VCE(sat) - IC IC(PK) (typ) (max) (max) 3300V 3.4V 200A 400A 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with Al N Substrates - (measured at the power busbars and not the auxiliary terminals) APPLICATIONS 1(E1/C2) 2(C1) 5(E1) 4(G1) 3(E2) 7(E2) 6(G2) High Reliability Inverters Motor Controllers Traction Auxiliaries The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200PHM33-A000 is a half bridge 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10µs short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. 8(C1) Fig. 1 Half bridge circuit diagram ORDERING INFORMATION Order As: DIM200PHM33-A000 Note: When ordering, please use the whole part number. Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 .dynexsemi. .. ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25˚C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax...