DIM800XSM33-F000 Datasheet | Dynex Semiconductor

FEATURES Soft Punch Through Silicon Isolated Al Si C Base with Al N Substrates High Thermal Cycling Capability 10µs Short Circuit Withstand Lead Free construction 10.2k V isolation KEY PARAMETERS V CES V CE(sat) - (typ) IC (max) I C(PK) (max) - (measured at the auxiliary terminals) 3300V 2.8V 800A 1600A APPLICATIONS High Reliability Inverters Motor Controllers Traction Drives Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 3600A. The DIM800XSM33-F000 is a single switch 3300V, soft punch through n-channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus 10us short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low...