TA32910Q - Asymmetric Thyristor

Features

s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A. c. Mains.

Dynex Semiconductor

Datasheet Details

Part number	TA32910Q
Manufacturer	Dynex Semiconductor
File Size	128.65 KB
Description	Asymmetric Thyristor
Datasheet	TA32910Q Datasheet
Additional preview pages of the TA32910Q datasheet.

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Other Datasheets by Dynex Semiconductor

TA329xxQ - Asymmetric Thyristor

Full PDF Text Transcription

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TA329..Q TA329..Q Asymmetric Thyristor Advance Information Replaces March 1998 version, DS4680-2.1 DS4680-3.0 January 2000 APPLICATIONS s High Frequency Applications s High Power Choppers And Inverters s Welding s Ultrasonic Generators s Induction Heating s 400Hz UPS KEY PARAMETERS VDRM 1400V IT(RMS) 370A ITSM 2000A dVdt 1000V/µs dI/dt 1000A/µs tq 7.0µs www.DataSheet4U.com s PWM Inverters FEATURES s Low Loss Asymmetrical Diffusion Structure s High Interdigitated Amplifying Gate s Gate Assisted Turn-off With Exclusive Bypass Diode s Fully Characterised For Operation up to 40kHz s Directly Compatible With 220-480 A.c.

Published: Sep 6, 2008 |