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DIM250PHM33-TS000 - Half Bridge IGBT

Key Features

  • 10µs Short Circuit Withstand.
  • High Thermal Cycling Capability.
  • High Current Density Enhanced DMOS SPT.
  • Isolated AlSiC Base with AlN Substrates KEY.

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Datasheet Details

Part number DIM250PHM33-TS000
Manufacturer Dynex
File Size 340.31 KB
Description Half Bridge IGBT
Datasheet download datasheet DIM250PHM33-TS000 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Replaces DS6092-1 DIM250PHM33-TS000 Half Bridge IGBT Module DS6092-2 September 2014 (LN31957) FEATURES  10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT  Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES VCE(sat) * (typ) IC (max) IC(PK) (max) 3300V 2.2V 250A 500A * Measured at the auxiliary terminals APPLICATIONS  High Reliability Inverters  Motor Controllers  Traction Auxiliaries  Choppers The Powerline range of high power modules includes half bridge, chopper, dual, single and bi-directional switch configurations covering voltages from 1200V to 6500V and currents up to 2400A.