• Part: MA5114
  • Description: Radiation hard 1024x4 Bit Static RAM
  • Manufacturer: Dynex
  • Size: 115.23 KB
Download MA5114 Datasheet PDF
Dynex
MA5114
FEATURES s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU <10-10 Errors/bitday s Single 5V Supply s Three State Output s Low Standby Current 50µA Typical s -55°C to +125°C Operation s All Inputs and Outputs Fully TTL or CMOS patible s Fully Static Operation s Data Retention at 2V Supply Figure 1: Truth Table Figure 2: Block Diagram 1/12 CHARACTERISTICS AND RATINGS Symbol VCC VI TA TS Parameter Supply Voltage Input Voltage Operating Temperature Storage Temperature Min. -0.5 -0.3 -55 -65 Max. 7 VDD+0.3 125 150 Units V V °C °C Stresses above those listed may cause permanent damage to the device. This is a stress rating only and functlonal operation of the device at these condltions, or at any other condition above those indicated in the operations section of this specification, is not Implied Exposure to absolute maxlmum rating conditions for extended perlods may affect device...