MA5114 - Radiation hard 1024x4 Bit Static RAM

Datasheet Summary

Features

s 3µm CMOS-SOS Technology s Latch-up Free s Fast Access Time 90ns Typical s Total Dose 106 Rad(Si) s Transient Upset >1010 Rad(Si)/sec s SEU.

Dynex

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Datasheet Details

Part number	MA5114
Manufacturer	Dynex
File Size	115.23 KB
Description	Radiation hard 1024x4 Bit Static RAM
Datasheet	MA5114 Datasheet
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MA5114 MA5114 Radiation hard 1024x4 Bit Static RAM Replaces June 1999 version, DS3591-4.0 DS3591-5.0 January 2000 The MA5114 4k Static RAM is configured as 1024 x 4 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The design uses a 6 transistor cell and has full static operation with no clock or timing strobe required. Address input buffers are deselected when Chip Select is in the HIGH state.

Published: Apr 27, 2005 |