MA7001 Datasheet | Dynex

MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces June 1999 version, DS3519-4.0 DS3519-5.0 January 2000 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process provides significant advantages over bulk silicon substrate technologies In addition to very good total dose hardness and neutron hardness >1015n/cm2, the Dynex Semiconductor technology provides very high transient gamma and single event upset performance without promising speed of operation The Sapphire substrate also eliminates latch-up giving greater flexibility of use in electrically severe...