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MA7001 - Radiation Hard 512x9 Bit FIFO

General Description

Reset (RS) Reset occurs when RS is in a low state, setting both read and write pointers to the first location in memory.

Reset is required prior to the first write.

Both READ (R) and WRITE (W) signals must be in high states during reset.

Key Features

  • s Radiation Hard CMOS-SOS Technology s Fast Access Time 60ns Typical s Single 5V Supply s Inputs Fully TTL and CMOS Compatible s -55°C to +125°C Operation Figure 1: Block Diagram 1/15 MA7001 DC.

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Datasheet Details

Part number MA7001
Manufacturer Dynex
File Size 144.12 KB
Description Radiation Hard 512x9 Bit FIFO
Datasheet download datasheet MA7001 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MA7001 MA7001 Radiation Hard 512x9 Bit FIFO Replaces June 1999 version, DS3519-4.0 DS3519-5.0 January 2000 The MA7001 512 x 9 FIFO is manufactured using Dynex Semiconductor's CMOS-SOS high performance, radiation hard, 3µm technology. The Dynex Semiconductor Silicon-on-Sapphire process provides significant advantages over bulk silicon substrate technologies In addition to very good total dose hardness and neutron hardness >1015n/cm2, the Dynex Semiconductor technology provides very high transient gamma and single event upset performance without compromising speed of operation The Sapphire substrate also eliminates latch-up giving greater flexibility of use in electrically severe environments.