E-CMOS ECDB2116S
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | ECDB2116S |
|---|---|
| Datasheet | ECDB2116S Download |
| Manufacturer |  E-CMOS |
| Description | P & N-Channel 20-V(D-S) MOSFET |
| Buy | Stock & Price |
DESCRIPTION
These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology.FEATURES
●20V/3.8A, RDS(ON) = 40mΩ @ VGS = 4.5V●-20V/-2.5A, RDS(ON) =100mΩ @ VGS = 4.5V
●Fast switching speed
●Suit for 1.8V Gate Drive
APPLICATIONS
●DFN 2x2-6 package designAPPLICATIONS
●Notebook●Newworking
●Load Switch
●Hand-held Instruments Pin Configuration
ABSOLUTE MAXIMUM RATINGS
(TC=25℃ Unless Otherwise Noted) Parameter Symbol N-Channel P-Channel Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation TC=25 OC TC=100OC TC=25 OC Derate above 25OC VDS 20 -20 VGS ±10 ±10 3.8 -2.5 ID 2.3 -1.5 IDM 15.2 -10 1.25 1.25 PD 0.01 0.01 Operating Junction and Storage Temperature Range TJ,TSTG -55 to 150 Unit V V A A w w/ OC OC E-CMOS Corp. ( 1/5 9A29N-Rev. F001 P & N-Channel 20-V(D-S) MOSFETs ECDB2116S Thermal Resistance Ratings Thermal Resistance Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol RθJA RθJC Typ. - Maximum Unit 100 OC/W 15 OC/W Ordering Information Device ECDB2116S Package DFN2x2-6 Remark Note 1.
