E-CMOS ECF8205
Dual N-Channel Enhancement Mode Power MOSFET
| Part No. | ECF8205 |
|---|---|
| Datasheet | ECF8205 Download |
| Manufacturer |  E-CMOS |
| Description | Dual N-Channel Enhancement Mode Power MOSFET |
| Buy | Stock & Price |
FEATURES
1.1 Low on-resistance 1.1.1 RDS(ON) = 28 mΩ MAX. (VGS = 4.5V, ID = 4A) 1.1.2 RDS(ON) = 37 mΩ MAX. (VGS = 2.5V, ID = 3A) 2.APPLICATIONS
● Li-ion battery management applications 3. Ordering Information ECF8205 4. Pin Assignment 5.ABSOLUTE MAXIMUM RATINGS
E-CMOS Corp. ( Page 1 of 5 1M13N-Rev.F001 Dual N-Channel Enhancement Mode Power MOSFET 6. Thermal Data ECF8205 7.ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
@ Tj = 25℃ ( unless otherwise specified ) 8. Source-Drain Diode Notes： 1. Pulse width limited by Max. junction temperature. 2. Pulse width ≦ 300us, duty cycle ≦ 2%. 3. Surface mounted on 1 in2 copper pad of FR4 board； 208℃/W when mounted on Min. copper pad. E-CMOS Corp. ( Page 2 of 5 1M13N-Rev.F001 Dual N-Channel Enhancement Mode Power MOSFET 9. Typical Characteristics ECF8205 E-CMOS Corp. ( Page 3 of 5 1M13N-Rev.F001 Dual N-Channel Enhancement Mode Power MOSFET 10. Package Information ECF8205 E-CMOS Corp. ( Page 4 of 5 1M13N-Rev.F001 Dual N-Channel Enhancement Mode Power MOSFET 11.
