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ECKS120M080 - Silicon Carbide MOSFET

Description

This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate.

Suitable for high switching frequency and highcharging efficiency systems, industrial motors driving and welding applications.

Features

  • Order code Vds Rds(on) Id ECKS120M080F4 1200V 80.0 mΩ 35A.
  • Robust semiconductor material.
  • SiC.
  • Very Low Switching losses.
  • IGBT.
  • compatible driving function.
  • Very good temperature related stability.
  • High avalanche ruggedness.
  • JEDEC Qualified.
  • Source Kelvin.

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Datasheet Details

Part number ECKS120M080
Manufacturer E-CMOS
File Size 247.01 KB
Description Silicon Carbide MOSFET
Datasheet download datasheet ECKS120M080 Datasheet
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    Silicon Carbide MOSFET ECKS120M080 General Features Order code Vds Rds(on) Id ECKS120M080F4 1200V 80.0 mΩ 35A ◆Robust semiconductor material – SiC ◆Very Low Switching losses ◆IGBT – compatible driving function ◆Very good temperature related stability ◆High avalanche ruggedness ◆JEDEC Qualified ◆Source Kelvin Applications ◆Solar inverters ◆PFC ◆UPS ◆DC-DC Converter ◆Welding ◆EV Charging General description This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate. Suitable for high switching frequency and highcharging efficiency systems, industrial motors driving and welding applications. It is also suitable for applications with high frequency switching and hard switching driving requirements.
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