Datasheet Details
| Part number | ECKS120M080 |
|---|---|
| Manufacturer | E-CMOS |
| File Size | 247.01 KB |
| Description | Silicon Carbide MOSFET |
| Datasheet |
 ECKS120M080 Datasheet
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General Description
This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate.
Suitable for high switching frequency and highcharging efficiency systems, industrial motors driving and welding applications.
Key Features
- Order code Vds Rds(on) Id ECKS120M080F4 1200V 80.0 mΩ 35A.
- Robust semiconductor material.
- SiC.
- Very Low Switching losses.
- IGBT.
- compatible driving function.
- Very good temperature related stability.
- High avalanche ruggedness.
- JEDEC Qualified.
- Source Kelvin.