ECKS120M080 Datasheet | E-CMOS

Features Order code Vds Rds(on) Id ECKS120M080F4 1200V 80.0 mΩ 35A - Robust semiconductor material - Si C - Very Low Switching losses - IGBT - patible driving function - Very good temperature related stability - High avalanche ruggedness - JEDEC Qualified - Source Kelvin Applications - Solar inverters - PFC - UPS - DC-DC Converter - Welding - EV Charging General description This Silicon Carbide Power MOSFET series realized from Tronkor to obtain higher breakdown voltage and robust gate. Suitable for high switching frequency and highcharging efficiency systems, industrial motors driving and welding applications. It is also suitable for applications with high frequency switching and hard switching driving requirements. Ordering code Ordering code TBD Marking TBD Package Packaging TO 247-3L / TO 247-4L Tube E-CMOS Corp. (.ecmos..tw) 1/4 3D21N-Rev. F001 Silicon Carbide MOSFET Absolute Maximum Ratings Symbol Parameter mon Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSmax Gate-Source Voltage (Max) VGSS Gate-Source Voltage...