E-CMOS ECP0048
The ECP0048 is the high cell density trenched N-Ch MOSFETS, which provide excellent RDSON and gate charge for most of the Synchronous Rectification for AC/DC Quick Charger. The test condition is VDD=25V, VGS=10V, L=0.3mH, IAS=35A 4.The power dissipation is limited by junction temperature 5.The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
| Part No. |
ECP0048 |
| Datasheet |
ECP0048
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| Manufacturer |
 E-CMOS |
| Description |
N-Ch 100V Fast Switching MOSFET |
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DESCRIPTION
Product Summary BVDSS RDSON ID 100V 9mΩ 80A TO220 Pin Configuration ABSOLUTE MAXIMUM RATINGS
Thermal Data E-CMOS Corp. ( Page 1 of 5 2D15N-Rev.F001 N-Ch 100V Fast Switching MOSFETS ECP0048 ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted) Diode Characteristics Note: 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating. 6.The maximum current rating is package limited. E-CMOS Corp. ( Page 2 of 5 2D15N-Rev.F001 N-Ch 100V Fast Switching MOSFETS Typical Characteristics ECP0048 E-CMOS Corp. ( Page 3 of 5 2D15N-Rev.F001 N-Ch 100V Fast Switching MOSFETS ECP0048 E-CMOS Corp. ( Page 4 of 5 2D15N-Rev.F001 N-Ch 100V Fast Switching MOSFETS TO220 Package Outline Dimensions ECP0048 E-CMOS Corp. ( Page 5 of 5 2D15N-Rev.F001
