ECP3907Z
Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
DFN3x3 Pin Configuration
BVDSS -30V
RDSON 20m
ID -30A
Features
- -30V,-30A, RDS(ON) =20mΩ@VGS = -10V
- Fast switching
- Green Device Available
- Suit for -4.5V Gate Drive Applications
- ESD Protection Embedded
Application
- MB / VGA / Vcore
- POL Applications
- Load Switch
- LED Application
Ordering Information
ECP3907Z XX X X
Package： F：DFN3- 3
Taping： R：Tape and Reel
G：Green Package
E-CMOS Corp. (.ecmos..tw)
Page 1 of 4
8I18N-Rev.F001
30V P-Channel MOSFETs
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol
Parameter
VDS VGS ID
PD TSTG
Drain-Source Voltage
Gate-Source...
