E-CMOS ECP6910
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.| Part No. | ECP6910 |
|---|---|
| Datasheet | ECP6910 Download |
| Manufacturer |  E-CMOS |
| Description | 60V N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. BVDSS RDSON ID 60V 50m 16AFEATURES
●60V,16A, RDS(ON) =50mΩ@VGS = 10V●Improved dv/dt capability Improved dv/dt capability
●Fast switching
●100% EAS Guaranteed
●Green Device Available Application
●Motor Drive
●Power Tools
●LED Lighting TO252 Pin Configuration Ordering Information ECP6910 XX X X Package： A4：TO252 Taping： R：Tape and Reel G：Green Package E-CMOS Corp. ( Page 1 of 6 9B15N-Rev.F001 60V N-Channel MOSFETs ECP6910
ABSOLUTE MAXIMUM RATINGS
Tc=25℃ unless otherwise noted Symbol Parameter VDS VGS ID IDM EAS IAS Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (TC=25℃) Drain Current – Continuous (TC=100℃) Drain Current – Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalanche Current2 Power Dissipation (TC=25℃) PD Power Dissipation – Derate above 25℃ TSTG TJ Storage Temperature Range Operating Junction Temperature Range Rating 60 ±20 16 10 64 11 15 31 0.25 -50 to 150 -50 to 150 Units V V A A A mJ A W W/℃ ℃ ℃ Thermal Characteristics Symbol Parameter Typ.
