ECP6960X
Description
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency fast switching applications.
DFN5- 6 Pin Configuration
BVDSS RDSON
60V
5.6m
85A
Features
- 60V,85A, RDS(ON) =5.6mΩ @VGS = 10V
- Improved dv/dt capability
- Fast switching
- 100% EAS Guaranteed
- Green Device Available
Application
- Motor Drive
- Power Tools
- LED Lighting
- Quick Charger
Ordering Information
ECP6960X XX X X
Package： F2：DFN5- 6
Taping： R：Tape and Reel
G：Green Package
E-CMOS Corp. (.ecmos..tw)
Page 1 of 5
8K16N-Rev.F001
60V N-Channel MOSFETs
Absolute Maximum Ratings Tc=25℃ unless otherwise noted
Symbol
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous (TC=25℃)...
