E-CMOS ENP3411
The ENP3411 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.| Part No. | ENP3411 |
|---|---|
| Datasheet | ENP3411 Download |
| Manufacturer |  E-CMOS |
| Description | 30V P-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS =-30V，ID =-9A RDS(ON)(Typ.)=22mΩ @VGS=-10V RDS(ON)(Typ.)=28mΩ @VGS=-4.5V● High power and current handing capability
● Lead free product is acquired
● Surface mount package Application
● PWM applications
● Load switch Package
● SOT-23-3L Schematic diagram Marking and pin assignment E-CMOS Corp. ( Page 1 of 6 2D8N-Rev.F001 30V P-Channel Enhancement Mode MOSFET ENP3411 Ordering Information ENP3411 XX GR B1=SOT-23-3L Absolute Maximum Rating (TA=25℃ umless otherwise noted) E-CMOS Corp. ( Page 2 of 6 2D8N-Rev.F001 30V P-Channel Enhancement Mode MOSFET ENP3411
ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise no Notes: a. surface mounted on FR4 board, t≤10sec b. pulse test: pulse width≤300μs, duty ≤2% c. guaranteed by design, not subject to production testing Thermal Characteristics E-CMOS Corp. ( Page 3 of 6 2D8N-Rev.F001 30V P-Channel Enhancement Mode MOSFET ENP3411 Typical Performance Characteristics E-CMOS Corp. ( Page 4 of 6 2D8N-Rev.F001 30V P-Chann...
