E-CMOS ENP4009
The ENP4009 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.DESCRIPTION
Conduction and switching losses are minimized due to an extremely low combination of RDS(ON) and Crss.GENERAL FEATURES
● VDS =40V,ID =10A RDS(ON)(Typ.)=12mΩ @VGS=10V RDS(ON)(Typ.)=14mΩ @VGS=4.5V● Lead free product is acquired
● Surface mount package Application
● High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
● Networking DC-DC Power System
● Load switch Package
● SOP-8 Schematic diagram Marking and pin assignment SOP-8 E-CMOS Corp. ( Page 1 of 6 2D11N-Rev.F002 40V N-Channel Enhancement Mode MOSFET ENP4009 Ordering Information ENP4009 XX GR M1=SOP-8
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) E-CMOS Corp. ( Page 2 of 6 2D11N-Rev.F002 40V N-Channel Enhancement Mode MOSFET ENP4009ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Thermal Characteristics A:The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design.