E-CMOS ENP4826
The ENP4826 uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.| Part No. | ENP4826 |
|---|---|
| Datasheet | ENP4826 Download |
| Manufacturer |  E-CMOS |
| Description | 60V Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS= 60V, ID= 6A RDS(ON)= 19mΩ (typical) @VGS= 10V RDS(ON)= 22mΩ (typical) @ VGS=4.5V● Excellent gate charge xRDS(ON) product (F OM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification Package
● SOP-8 Schematic diagram Marking and pin assignment E-CMOS Corp. ( Page 1 of 4 2D14N-Rev.F001 60V Dual N-Channel Enhancement Mode MOSFET ENP4826 Ordering Information ENP4826 XX GR M1= SOP-8
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted)ELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) E-CMOS Corp. ( Page 2 of 4 2D14N-Rev.F001 60V Dual N-Channel Enhancement Mode MOSFET ENP4826 Thermal Characteristics A: The value of RθJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
