E-CMOS ENP4836
The ENP4836 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.| Part No. | ENP4836 |
|---|---|
| Datasheet | ENP4836 Download |
| Manufacturer |  E-CMOS |
| Description | 30V Dual N-Channel Enhancement Mode MOSFET |
| Buy | Stock & Price |
DESCRIPTION
GENERAL FEATURES
● VDS=30V, ID =8A RDS(ON)=15.5mΩ (typical) @ VGS=10V RDS(ON)=19.2mΩ (typical) @ VGS=4.5V● Excellent gate charge x RDS(ON) product (FOM)
● Very low on-resistance RDS(ON)
● 150 °C operating temperature
● Pb-free lead plating
● 100% UIS tested Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification Package
● SOP-8 Schematic diagram Marking and pin assignment Note：XXXX is the date code, YYYY is the Quality Code. E-CMOS Corp. ( Page 1 of 7 2D15N-Rev.F001 30V Dual N-Channel Enhancement Mode MOSFET ENP4836 Ordering Information ENP4836 XX GR M1=SOP-8
ABSOLUTE MAXIMUM RATINGS
(TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V Drain Current-Continuous (Silicon Limited) TA=25°C TA=75°C ID 8 6.5 A Pulsed Drain Current (Package Limited) IDM 35 A Single pulse avalanche energy EAS 30 mJ Maximum power dissipation TA=25°C TA=75°C PD 2 1.3 W Operating junction Tempe...
